| PART |
Description |
Maker |
| C527MB290-S0500 C470MB290-SXX00 C460MB290-SXX00 C5 |
MegaBright? Generation II LEDs
|
Cree, Inc
|
| MC100LVEL39 MC100LVEL39DW MC100EL39 MC100EL39DW ON |
±2/4,±4/6 Clock Generation Chip
From old datasheet system
2/4 /4/6 Clock Generation Chip
2/44/6 Clock Generation Chip
2/4,4/6 Clock Generation Chip
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| APT30GT60BRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT & FRED 600V 55A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| SI3215-BT SI3215-GT SI3215-KT SI3215-X-FM SI3215-X |
PROSLICPROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, PDSO38
PROSLICPROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, QCC38
PROSLIC? PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION
PROSLIC垄莽 PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories, Inc.
Silicon Laboratories Inc.
|
| SI3233-X-GM SI3233-X-FM SI3201-X-FS SI3201-X-GS SI |
PROSLICPROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, QCC38
PROSLIC? PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories, Inc.
Silicon Laboratories Inc.
|
| STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF1 |
N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
|
STMicroelectronics
|
| CY28416 CY28416OXC CY28416OXCT |
Next-Generation FTG for Intel® Architecture
Next Generation FTG for Intel-R Architecture
|
Cypress Semiconductor
|
| APT60GF120JRD |
Fast IGBT & FRED 1200V 100A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| APT50GF120JRD |
Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
